2001. 2. 24 1/3 semiconductor technical data KTC3881S epitaxial planar npn transistor revision no : 2 high frequency application. vhf band amplifier application. features good linerarity of f t. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) type name marking lot no. hh characteristic symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 4 v collector current i c 50 ma base current i b 25 ma collector power dissipation p c 150 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =30v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 - - 0.1 a collector-emitter breakdown voltage v (br)ceo i c =10ma 25 - - v dc current gain h fe v ce =10v, i c =10ma 20 70 200 saturation voltage collector-emitter v ce(sat) i c =15ma, i b =1.5ma - - 0.2 v base-emitter v be(sat) - - 1.5 collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 1.1 1.6 pf collector-base time constant c c rbb? v cb =10v, i e =1ma, f=30mhz - - 25 ps transition frequency f t v ce =10v, i c =10ma 250 600 - mhz
2001. 2. 24 2/3 KTC3881S revision no : 2 reverse transfer susceptance -2.0 re -0.3 reverse transfer conductance g (ms) re re y - f forward transfer susceptance -200 fe 0 forward transfer conductance g (ms) fe transition frequency f (mhz) t 100 50 10 0.3 0.1 collector current i (ma) c f - i h - i c collector current i (ma) 0.1 0.3 10 50 1k fe dc current gain h 10 collector output capacitance c (pf) 0.1 ob 10 50 10 0.3 0.1 collector-base voltage v (v) cb c - v , c - v y - f ie ie input conductance g (ms) 2 ie 0 input susceptance b (ms) fe c 13 30 50 100 300 500 common emitter v =10v ta=25 c ce tc 13 300 500 1k 3k 5k 10k ce ta=25 c v =10v common emitter ob cb re cb re reverse transfer capacitance c (pf) 13 0.3 0.5 1 3 5 f=1mhz i =0 ta=25 c e c ob re c 4 8 12 16 20 24 28 32 36 4 8 12 16 20 24 + + + + common emitter v =10v ta=25 c ce 100 200 400 300 5ma 10ma 50mhz i =3ma c b (ms) -0.25 -0.2 -0.15 -0.1 -0.05 0 -1.6 -1.2 -0.8 -0.4 0 + + + + + ce ta=25 c v =10v common emitter 50mhz 100 200 300 400 5ma 10ma i =3ma c b (ms) 40 80 120 160 200 240 -160 -120 -80 -40 0 + + + + common emitter v =10v ta=25 c ce 400 300 200 100 10ma 50mhz i =3ma c 5ma y - f fe
2001. 2. 24 3/3 KTC3881S revision no : 2 rb b (ms) -1.6 0 0 ambient temperature ta ( c) c p - ta -1.2 reverse transfer conductance g (ms) rb y - f (y - f) oe oe output conductance g (g ) (ms) 0 0 output susceptance b (b ) (ms) ob ib input susceptance b (ms) -200 0 input conductance g (ms) ib ib y - f -240 0 ob oe ob 0.4 0.8 1.2 1.6 0.8 1.6 2.4 3.2 common emitter (common base) v =10v ta=25 c ce + + + + + 400 300 200 100 10ma 5ma 50mhz i =3ma c 40 80 120 160 200 240 -160 -120 -80 -40 0 + + + + + common base v =10v ta=25 c ce i =3ma 5ma 10ma 50mhz 100 200 300 400 c reverse transfer susceptance -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.2 -0.8 -0.4 0 ce ta=25 c v =10v common base 50mhz 100 200 300 400 10ma 5ma i =3ma c + + + + + forward transfer susceptance b (ms) fb fb forward transfer conductance g (ms) -200 -160 -120 -80 -40 0 40 80 120 160 200 + + + + common base v =10v ta=25 c ce 50mhz 10ma 5ma i =3ma 100 200 300 400 c + collector power dissipation p (mw) c 25 50 75 100 125 150 175 25 50 75 100 125 150 175 y - f rb fb y - f
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